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2SC1569 Datasheet

Part Number 2SC1569
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC1569 Datasheet2SC1569 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC1569 DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For color TV chroma output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-bas.

  2SC1569   2SC1569






Part Number 2SC1569
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Transistor
Datasheet 2SC1569 Datasheet2SC1569 Datasheet (PDF)

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  2SC1569   2SC1569







Part Number 2SC1569
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC1569 Datasheet2SC1569 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 40-170 @IC= 50mA, VCE= 10V ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Em.

  2SC1569   2SC1569







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC1569 DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For color TV chroma output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 12.5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.2 1.5 W UNIT V V V A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10µA ;IE=0 IC=1mA ;IB=0 IE=10µA ;IC=0 IC=100mA ;IB=20mA IC=100mA ;IB=20mA VCB=100V;IE=0 VEB=5V; IC=0 IC=50mA ; VCE=10V IE=0; VCB=10V;f=1MHz IC=30mA ; VCE=10V 40 40 MIN 300 300 7 2SC1569 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V 1.0 1.2 1.0 1.0 170 65 V V µA µA pF MHz 2 Sa.


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