isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1586
DESCRIPTION ·With TO-3 Package ·High voltage ·Wide are...
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1586
DESCRIPTION ·With TO-3 Package ·High
voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current-Continuous Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
200
V
200
V
6
V
15
A
150
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1586
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation
Voltage IC=5A; IB= 0.5A
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 25mA; IB= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1mA; IC= 0
hFE
DC Current Gain
IC=5A; VCE= 4V
ICBO
Collector Cutoff Current
VCB=200V ; IE= 0
IEBO
Emitter Cutoff Current
VEB=7V; IC= 0
MIN TYP. MAX UNIT
2.0
V
200
V
6
V
60
100 uA
100 uA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presente...