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2SC1619 TRANSISTOR Datasheet PDFSILICON POWER TRANSISTOR SILICON POWER TRANSISTOR |
| Part Number | 2SC1619 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Feature | SavantIC Semiconductor
www. DataSheet4U. com Product Specification Silicon NPN Power Transistors 2SC1619 DESCRIPTION ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications PINNING(see fig. 2) PIN 1 2 3 Base Emitter Collector Fig. 1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage t. |
| Manufacture | SavantIC |
| Datasheet |
| Part Number | 2SC1619 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Feature | SavantIC Semiconductor
www. DataSheet4U. com Product Specification Silicon NPN Power Transistors 2SC1619 DESCRIPTION ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications PINNING(see fig. 2) PIN 1 2 3 Base Emitter Collector Fig. 1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage t. |
| Manufacture | SavantIC |
| Datasheet |
| Part Number | 2SC1619 |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1619 DESCRIPTION ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 100 V 80 V 6 V 6 A 50 W. |
| Manufacture | INCHANGE |
| Datasheet |
| Part Number | 2SC1619 |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1619 DESCRIPTION ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 100 V 80 V 6 V 6 A 50 W. |
| Manufacture | INCHANGE |
| Datasheet |
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