2SC1623

www.DataSheet4U.com MCC Features
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623 High DC Current Gain: hFE=200 TYP.(V CE=6.0V, IC=1.0mA) High voltage: VCEO=50V NPN Silicon Epitaxial Transistors Unit V V V mA mW O C O C F Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 60 5.0 100 200 -55 to +150 -55 to +150 SOT-23 A D C B E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector Cutoff Current (VCB=60Vdc,IE =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) DC Current Gain* (IC=1.0mAdc, VCE=6.0Vdc) Collector Saturation Voltage* (IC=100mAdc, IB =10mAdc) Base Saturation Voltage* (IC=100mAdc,IB =10mAdc) Base Emitter Voltage* (V CE=6.0Vdc, IC=1.0mAdc) Collector Capacitance (V CB=6.0Vdc, IE =0, f=1.0MHz) Gain Bandwidth product (VCE=6.0Vdc, IE =10mAdc) Min ----Typ ----Max 0.1 0.1 Units G H J OFF CHARACTERISTICS ICBO IEBO uAdc K uAdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 DIMENSIONS MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 ON CHARACTERISTICS hF V CE(sat) V BE(SAT) V BE Cob fT 90 ----0.55 ----200 0.15 0.86 0.62 3.0 250 600 0.3 1.0 0.65 ------Vdc Vdc Vdc pF MHz MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2....