isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1970
DESCRIPTION ·High Power Gain-
: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE...
