| Part Number | 2SC1983 |
| Manufacturer | Wing Shing Computer Components |
| Title | NPN SILICON DARLINGTON TRANSISTOR |
| Description | 2SC1983 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS (TA=25℃... |
| Features |
... |
| Datasheet | 2SC1983 pdf datasheet |
| Part Number | 2SC1988 |
| Manufacturer | NEC |
| Title | NPN SILICON HIGH FREQUNY TRANSISTOR |
| Description | . |
| Features |
. |
| Datasheet | 2SC1988 pdf datasheet |
| Part Number | 2SC1986 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Silicon NPN tripe diffused mesa ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variation. |
| Features |
IC= 3A; IB= 300mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= 500mA; VCE= 12V
MIN TYP. MAX UNIT
80
V
1.0
V
1
mA
1
mA
40
10
MHz
NOTICE： ISC reserves the ri. |
| Datasheet | 2SC1986 pdf datasheet |
| Part Number | 2SC1986 |
| Manufacturer | SavantIC |
| Title | (2SC1985 / 2SC1986) SILICON POWER TRANSISTOR |
| Description | ·With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose application. |
| Features |
EBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=3A; IB=0.3A VCB=80V; IE=0 CONDITIONS
2SC1985 2SC1986
SYMBOL
MIN 60
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 80 1.0 V
ICBO
Collector cut-off current
1.0 VCB=100V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4. |
| Datasheet | 2SC1986 pdf datasheet |
| Part Number | 2SC1985 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Silicon NPN tripe diffused mesa ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 60(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variation. |
| Features |
IC= 3A; IB= 300mA
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= 500mA; VCE= 12V
MIN TYP. MAX UNIT
60
V
1.0
V
1
mA
1
mA
40
10
MHz
NOTICE： ISC reserves the righ. |
| Datasheet | 2SC1985 pdf datasheet |
| Part Number | 2SC1985 |
| Manufacturer | SavantIC |
| Title | (2SC1985 / 2SC1986) SILICON POWER TRANSISTOR |
| Description | ·With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose application. |
| Features |
EBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=3A; IB=0.3A VCB=80V; IE=0 CONDITIONS
2SC1985 2SC1986
SYMBOL
MIN 60
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 80 1.0 V
ICBO
Collector cut-off current
1.0 VCB=100V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4. |
| Datasheet | 2SC1985 pdf datasheet |
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