ST 2SC2001
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdiv...
ST 2SC2001
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into three groups, O, Y and G, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 oC)
Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 30 25 5 700 600 150
-55 to +150
Unit V V V mA
mW OC OC
РАДИОТЕХ
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта:
[email protected] Веб: www.rct.ru
®
ST 2SC2001
Characteristics at Tamb=25 oC
DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y G at VCE=1V, IC=700mA
Collector Base Breakdown
Voltage at IC=10µA
Base Emitter
Voltage at IC=10mA, VCE=6V
Emitter Cutoff Current at...