2SC2292

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2292 DESCRIPTION ·With TO-3 package ·High speed ,high voltage APPLICATIONS ·For high speed ,high voltage switching and DC-DC converter application PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tmb.25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 8 80 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=500V; IE=0 VEB=7V; IC=0 IC=4A ; VCE=2V 15 MIN 400 500 7 2SC2292 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 0.8 1.5 0.1 0.1 V V mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Produc...