2SC2721

DATA SHEET SILICON TRANSISTOR 2SC2721 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING FEATURES Complementary transistor with 2SA1154 High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 60 60 5.0 0.7 1.0 1 150 −55 to +150 Unit V V V A A W °C °C PACKAGE DRAWING (UNIT: mm) ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 60 V, IE = 0 Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 DC current gain hFE1 VCE = 1.0 V, IC = 0.1 A * DC current gain hFE2 VCE = 1.0 V, IC = 0.5 A * DC base voltage VBE VCE = 6.0 V, IC = 10 mA Collector saturation voltage VCE(sat) IC = 0.5 A, IB = 50 mA * Base saturation voltage VBE(sat) IC = 0.5 A, IB = 50 mA * Output capacitance Gain bandwidth product Cob VCB = 6.0 V, IE = 0, f = 1.0 MHz fT VCE = 6.0 V, IE = −10 mA Turn-on time ton Refer to the test circuit. Storage temperature tstg Turn-off time toff * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed MIN. 90 50 600 TYP. 200 150 635 0.12 0.90 13 110 60 600 650 MAX. 100 100 400 700 0.35 1.2 Unit nA nA mV V V pF MHz ns ns ns hFE ...