isc Silicon NPN Power Transistor
2SC2768
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min...
isc Silicon NPN Power Transistor
2SC2768
DESCRIPTION ·High Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 200V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
250
V
VCEO
Collector-Emitter
Voltage
200
V
VCEO(SUS) Collector-Emitter
Voltage
200
V
VEBO
Emitter-Base
voltage
7
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W
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isc Silicon NPN Power Transistor
2SC2768
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 25mA; IB= 0
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 1A; IB= 0
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 0.1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2A; IB= 0.8A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 2A; IB= 0.8A
ICBO
Collector Cutoff ...