2SC2786

RoHS 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA D* Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW T* High Hfe And Good Linearity .,LABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Collector-Base Voltage Vcbo 50 OCollector-Emitter Voltage Vceo 45 2.9 1.9 0.95 0.95 0.4 Emitter-Base Voltage Vebo 5 CCollector Current Ic 100 Collector Dissipation Ta=25 * PD 225 ICJunction Temperature Tj 150 Storage Temperature Tstg -55-150 Unit V V V mA mW 1. 2.4 1.3 1.BASE 2.EMITTER 3.COLLECTOR Unit:mm NELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max OCollector-Base Breakdown Voltage BVcbo 50 Collector-Emitter Breakdown BVceo 45 RVoltage# Emitter-Base Breakdown Voltage BVebo 5 TCollector-Base Cutoff Current Icbo 50 Emitter-Base Cutoff Current Iebo 50 CDC Current Gain Hfe 60 300 1000 ECollector-Emitter Saturation Voltage Vce(sat) 0.3 Base-Emitter Saturation Voltage Vbe(sat) 1.00 LBase-Emitter on Voltage Vbe(on) 0.58 0.63 o.7 Output Capacitance Cob 2.2 3.5 ECurrent Gain-Bandwidth Product fT 150 270 Noise Figure NF 10 J* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . E# Pulse Test : Pulse Width 300uS,Duty cycle 2% W DEVICE MARKING: 2SC2786=L6,F1X Unit V V V nA nA V V V PF MHz dB Test Conditions Ic=100uA Ie=0 Ic= 1mA Ib=0 Ie= 100uA Ic=0 Vcb= 50V Ie=0 Veb= 5V Ic= 0 Vce= 5V Ic=...