2SC2879

HG Semiconductors 2SC2879HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION Designed primarily for 2-30MHz SSB linear power amplifier applications (low supply voltage use) FEATURES Specified 12.5V, 28MHz Characteristics PO = 100W PEP GP = 15.2 Typ. at 100 W/28 MHz IMD3 = -24 dBc max. at 100 W(PEP) Omnigold™ Metalization System DIMENSIONS D A F qC U1 B H 4 α 1 H Lb 3 w2 M C A c p U2 5 D1 U3 w1 M A B 2 Q 1.Collector 2.EMITTER 3.BASE 4.EMITTER 5.FIN NOTE: ALL ELECTRODES ARE ISOLATED FROM FLANCE. UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.219 0.006 0.004 D D1 F H L p Q q U1 U2 U3 12.86 12.83 2.67 28.45 7.93 12.59 12.57 2.41 25.52 6.32 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.506 0.496 0.505 0.495 0.105 0.095 1.120 1.005 0.312 0.249 0.130 0.120 0.175 0.154 0.725 0.98 0.97 0.255 0.485 0.245 0.475 w1 0.51 0.02 w2 1.02 0.04 α 45° MAXIMUM RATINGS C...