| Part Number | 2SC2958 |
| Manufacturer | NEC |
| Title | NPN SILICON EPITAXIAL TRANSISTOR |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation an... |
| Features |
• Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Co... |
| Datasheet | 2SC2958 pdf datasheet |
| Part Number | 2SC2959 |
| Manufacturer | NEC |
| Title | NPN SILICON EPITAXIAL TRANSISTOR |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation an. |
| Features |
• Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Co. |
| Datasheet | 2SC2959 pdf datasheet |
| Part Number | 2SC2954 |
| Manufacturer | Renesas |
| Title | NPN Silicon Transistor |
| Description | The 2SC2954 is an NPN epitaxial silicon transistor disigned for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV bnad. . |
| Features |
• Low Noise and High Gain. NF: 2.3 dB, 2.4 dB S21e: 20 dB, 12.5 dB • Large PT in Small Package. PT: 2 W with 16 cm × 0.7 mm Ceramic Substrate. 2 1.6±0.2 1.5±0.1 0.8 MIN. E 0.42 ±0.06 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 −0.03 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base V. |
| Datasheet | 2SC2954 pdf datasheet |
| Part Number | 2SC2954 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN RF Transistor |
| Description | ·Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz ·Minimum Lo. |
| Features |
urrent
VCB= 10V; IE= 0
hFE
DC Current Gain
IC= 50mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IE= 0 ; VCB= 10V;f= 1.0MHz
IC= 50mA ; VCE= 10V;f= 500MHz RG= 50Ω
IC= 30mA ; VCE= 10V;f= 500MHz RG= 5. |
| Datasheet | 2SC2954 pdf datasheet |
| Part Number | 2SC2954 |
| Manufacturer | NEC |
| Title | NPN Silicon Transistor |
| Description | The 2SC2954 is an NPN epitaxial silicon transistor disigned for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV bnad. . |
| Features |
• Low Noise and High Gain. NF: 2.3 dB, 2.4 dB 0.8 MIN. 4.5±0.1 1.6±0.2 1.5±0.1 S21e: 20 dB, 12.5 dB • Large PT in Small Package. PT: 2 W with 16 cm 0.7 mm Ceramic Substrate. 2 E 0.42 ±0.06 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 −0.03 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to. |
| Datasheet | 2SC2954 pdf datasheet |
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