2SC2979

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2979 DESCRIPTION ·With TO-220C package ·High VCBO ·Fast switching speed. APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 6 1.5 40 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; RBE=<,L=100mH IE=10mA ; IC=0 IC=0.75A; IB=0.15A IC=0.75A; IB=0.15A VCB=750V ;IE=0 VCE=650V; RBE=< IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V 15 7 MIN 800 7 2SC2979 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 100 V V µA µA Switching times ton tstg tf Turn-on time Storage time Fall time VCCA250V; IC=1.5A IB1=0.3A;IB2=-0.75A 1.0 3.0 ...