2SC3025

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage power switching character display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 6 A IC(surge) Collector Current-Surge PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SC3025 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A Switching times tstg Storage Time tf Fall Time IC= 5A, IB1= 1A; IB2= -2.5A 2SC3025 MIN TYP. MAX UNIT 800 V 6 V 0.5 mA 2.0 V 1.5 V 4 μs 0.5 μs Notice： ISC reserves the rights to mak...