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2SC3051 Transistor Datasheet PDFSilicon NPN Transistor Silicon NPN Transistor |
| Part Number | 2SC3051 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | SILICON NPN TRIPLE DIFFUSED TYPE
SWITCH ING REGULATOR AND HIGH VOLTAGE SWITCHIN G
APPLICATIONS. HIGH SPEED DC-DC CONVER TER APPLICATION. FEATURES . Excellent S witching Times : t r=1. 0/is(Max. ), tf=1 . 5/*s(Max. ) at Ic=0. 5A . High Collecto r Breakdown Voltage : Vceo= 400V 7. 9 M AX. , Unit in mm MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC SYMBOL Collecto r-Base Voltage Collector-Emitter Voltag e Emitter-Base Voltage VCBO VcEO VEBO Collector Current DC Pulse ic ICP B ase Current IB Collector Power Dissip ation Ta=25 C Tc=25°C Junction Tempe rature Storage Temperature Range L st g ELECTRICAL CH . |
| Manufacture | Toshiba |
| Datasheet |
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| Part Number | 2SC3051 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | SILICON NPN TRIPLE DIFFUSED TYPE
SWITCH ING REGULATOR AND HIGH VOLTAGE SWITCHIN G
APPLICATIONS. HIGH SPEED DC-DC CONVER TER APPLICATION. FEATURES . Excellent S witching Times : t r=1. 0/is(Max. ), tf=1 . 5/*s(Max. ) at Ic=0. 5A . High Collecto r Breakdown Voltage : Vceo= 400V 7. 9 M AX. , Unit in mm MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC SYMBOL Collecto r-Base Voltage Collector-Emitter Voltag e Emitter-Base Voltage VCBO VcEO VEBO Collector Current DC Pulse ic ICP B ase Current IB Collector Power Dissip ation Ta=25 C Tc=25°C Junction Tempe rature Storage Temperature Range L st g ELECTRICAL CH . |
| Manufacture | Toshiba |
| Datasheet |
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