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2SC3146 Datasheet

Part Number 2SC3146
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3146 Datasheet2SC3146 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION ·With TO-220C package ·High switching speed ·High DC current gain ·Wide area of safe operation ·Complement to type 2SA1260 APPLICATIONS ·60V/7A for High-Speed Drivers Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3146 ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter .

  2SC3146   2SC3146






Part Number 2SC3146
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3146 Datasheet2SC3146 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.5A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Bas.

  2SC3146   2SC3146







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION ·With TO-220C package ·High switching speed ·High DC current gain ·Wide area of safe operation ·Complement to type 2SA1260 APPLICATIONS ·60V/7A for High-Speed Drivers Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3146 ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 125 -55~125 CONDITIONS Open emitter Open base Open collector VALUE 70 60 5 7 40 W UNIT V V V A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;RBE=: IC=5mA ;IE=0 IC=3.5A ,IB=7mA IC=3.5A ,IB=7mA VCB=40V, IE=0 VEB=5V; IC=0 IC=3.5A ; VCE=2V 2000 MIN 60 70 SYMBOL V(BR)CEO V(BR)CBO VCE(sat)-1 VCE(sat)-2 ICBO IEBO hFE 2SC3146 TYP. MAX UNIT V V 1.5 2.0 0.1 3.0 V V mA mA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SC.


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