2SC3175

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3175 DESCRIPTION ·Low Collector Saturation Voltage ·High switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in high definition CRT display(VCC=12 to 24V) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3175 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB=6V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 1V hFE-2 DC Current Gain IC= 5A ; VCE= 1V fT Current-Gain—Bandwidth Product IE= -500mA; VCE= 10V MIN TYP. MAX UNIT 200 V 1.0 V 1.2 V 100 μA 100 μA 15 10 50 10 40 MHz NOTICE： ISC res...