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2SC3210 Datasheet

Part Number 2SC3210
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3210 Datasheet2SC3210 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION ·With TO-3PFa package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base curr.

  2SC3210   2SC3210






Part Number 2SC3210
Manufacturers Panasonic
Logo Panasonic
Description Silicon NPN Transistor
Datasheet 2SC3210 Datasheet2SC3210 Datasheet (PDF)

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  2SC3210   2SC3210







Part Number 2SC3210
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3210 Datasheet2SC3210 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V .

  2SC3210   2SC3210







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION ·With TO-3PFa package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 20 5 100 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3210 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=10V 15 8 11 MHz MIN 400 1.0 1.5 100 100 TYP. MAX UNIT V V V µA µA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Turn-on time Storage time Fall time IC=5A; VCC=100V IB1=-IB2=1A 1.0 2.5 1.0 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product.


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