isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min) ·High ...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 800V (Min) ·High Switching Speed ·Large safe operating area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulators,Motor controls,Ultrasonic
Oscillators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base
Voltage
1200
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
80
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
2SC3214
isc website：www.iscsemi.com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustainig
Voltage IC= 10mA; IB=0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 2.5A; IB= 1.0A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 2.5A; IB= 1.0A
hFE-1
DC Current Gain
IC= 1.0A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
ICEO
Collector Cutoff Current
VCE= 800V; RBE= ∞
2SC3214
MIN TYP. MAX UNIT
800
V
7
V
2.0
V
1.5
V
20
0.1 mA
0.1 mA
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