| Part Number | 2SC3222 |
| Manufacturer | Shindengen Electric Mfg.Co.Ltd |
| Title | High Voltage Ultra High Speed Switching Transistors |
| Description | ... |
| Features |
... |
| Datasheet | 2SC3222 pdf datasheet |
| Part Number | 2SC3229 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust. |
| Features |
Breakdown Voltage IC= 20mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 240V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 10V
hFE-2
DC Current Gain
IC= 20mA; VCE= 10V
COB
Output Cap. |
| Datasheet | 2SC3229 pdf datasheet |
| Part Number | 2SC3229 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·High voltage: VCEO=300V(min) APPLICATIONS ·For color TV chroma output applications PINNING PIN 1 2 3 Base Collector Emitter. |
| Features |
IC=100µA; IB=0 IE=10µA; IC=0 IC=0.5mA ; VCE=10V IC=20mA ; VCE=10V VCB=240V; IE=0 VEB=5V; IC=0 IE=0; VCB=20V;f=1MHz IE=20mA ; VCB=20V 75 300
1.0
V
Collector-emitter breakdown voltage
V
Emitter-base breakdown voltage
7
V
DC current gain
20
DC current gain
30
200
Collector cut-off current
. |
| Datasheet | 2SC3229 pdf datasheet |
| Part Number | 2SC3228 |
| Manufacturer | Korea Electronics |
| Title | TRANSISTOR |
| Description | w w w .d e e h s a t a . u t4 m o c www..com . |
| Features |
. |
| Datasheet | 2SC3228 pdf datasheet |
| Part Number | 2SC3225 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon NPN TRANSISTOR |
| Description | 2SC3225 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225 Switching Applications Solenoid Drive Applications Industrial Applications Unit: . |
| Features |
CEO hFE VCE (sat) VBE (sat)
fT Cob
VCB = 40 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCB = 2 V, IC = 100 mA VCB = 10 V, IB = 0, f = 1 MHz
Min Typ. Max Unit
― ― 10 µA
― ― 1 µA
40 ― ―
V
500 ―
―
― 0.3 0.5
V
― ― 1.1 V. |
| Datasheet | 2SC3225 pdf datasheet |
| Part Number | 2SC3223 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@IC= 10A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performan. |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
. |
| Datasheet | 2SC3223 pdf datasheet |
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