2SC3285

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V(Min) ·High Speed Switching ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 70 W 2.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3285 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 1000V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V; f= 1MHz Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= 2A, IB1= 0.4A; IB2= -0.8A, VCC= 250V 2SC...