| Part Number | 2SC3293 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN Transistor |
| Description | Ordering number:EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications · Suitable for use in switching of L l... |
| Features |
· High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. · High inductive load handling capability. Specifications [2S... |
| Datasheet | 2SC3293 pdf datasheet |
| Part Number | 2SC3299 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 50V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1307 ·Minimum Lot-to-Lot variations for ro. |
| Features |
mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A
VB E(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
hFE-2
DC Current Gain
IC. |
| Datasheet | 2SC3299 pdf datasheet |
| Part Number | 2SC3299 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | :h SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES . Low Collector Saturation Voltage : VcE(s. |
| Features |
. Low Collector Saturation Voltage
: VcE(sat)=0.4V(Max.) at Ic=3A , High Speed Switching Time : t st g=l . 0/is(Typ . )
10.3MAX.
—70 03.2±O.2
r 1/
/
i
< Aei
j
X < s
rfl -H
o
r-'
. Complementary to 2SA1307
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Volta. |
| Datasheet | 2SC3299 pdf datasheet |
| Part Number | 2SC3299 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applica. |
| Features |
nt DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.15A IC=3A; IB=0.15A VCB=50V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=3A ; VCE=1V IE=0 ; VCB=10V,f=1MHz IC=1A ; VCE=4V 70 30 MIN 50 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT
. |
| Datasheet | 2SC3299 pdf datasheet |
| Part Number | 2SC3298B |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Complement to Type 2SA1306B ·Minimum Lot-to-Lot variations . |
| Features |
Breakdown Voltage
2SC3298B IC= 10mA; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 500mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 100mA . |
| Datasheet | 2SC3298B pdf datasheet |
| Part Number | 2SC3298B |
| Manufacturer | Motorola |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | . |
| Features |
. |
| Datasheet | 2SC3298B pdf datasheet |
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