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2SC3307 Datasheet

Part Number 2SC3307
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3307 Datasheet2SC3307 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800.

  2SC3307   2SC3307






Part Number 2SC3307
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3307 Datasheet2SC3307 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3307 2SC3307 High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications Industrial Applications Unit: mm • Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) (IC = 5 A) • High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base vol.

  2SC3307   2SC3307







Part Number 2SC3307
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3307 Datasheet2SC3307 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3307 DESCRIPTION ·With TO-3PL package ·Excellent switching times : tr=1.0µs(Max .),tf=1.0µs(Max .)(IC=5A) ·High collector breakdown voltage : VCEO=800V APPLICATIONS ·High speed,high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symb.

  2SC3307   2SC3307







NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3307 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3307 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 5A; IB= 1A VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 10mA ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V Switching times tr Rise Time tstg Storage Time tf Fall Time IC= 1A, IB1= .


2020-09-20 : 2SC3300    2SC3307    2SC3253    2SC3211    2SC3182    2SC3180    2SC3179    2SC3171    2SC3159    2SC3158   


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