isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage ·High Switching Speed ·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1100
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current- Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3552
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1
DC Current Gain
IC= 0.8A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.8A ; VCE= 10V
Switc...
