| Part Number | 2SC3687 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN Triple Diffused Planar Silicon Transistor |
| Description | Ordering number:EN1939B NPN Triple Diffused Planar Silicon Transistor 2SC3687 Ultrahigh-Definition CRT Display Horizontal Deflection Output Appl... |
| Features |
· Fast speed (tf typ=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curre... |
| Datasheet | 2SC3687 pdf datasheet |
| Part Number | 2SC3689 |
| Manufacturer | Kexin |
| Title | Transistor |
| Description | SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC3689 SOT-23 Unit: mm Features Small Cob (Cob=1.5pF typ). +0.1 2.4-0.1 +0.1 2. |
| Features |
Small Cob (Cob=1.5pF typ).
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
High DC current gain (hFE=800 to 3200).
1 2
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Adoption of FBET process.
Low collector-to-emitter saturation voltage (VCE(sat) High VEBO (VEBO 15V).
0.5V).
0.55
0.4
3
+0.05 0.1-0.01
+0.1. |
| Datasheet | 2SC3689 pdf datasheet |
| Part Number | 2SC3689 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN Epitaxial Planar Silicon Transistor |
| Description | Ordering number : EN1855B 2SC3689 SANYO Semiconductors DATA SHEET 2SC3689 NPN Epitaxial Planar Silicon Transistor High-hFE, Low-Frequency Gene. |
| Features |
• Small Cob (Cob=1.5pF). • Ultrasmall-sized package permitting 2SC3689-used sets to be made smaller, slimmer. • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High VEBO (VEBO≥15V). Specifications Absolute Maximum . |
| Datasheet | 2SC3689 pdf datasheet |
| Part Number | 2SC3688 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performan. |
| Features |
Emitter Saturation Voltage IC= 8A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 2A
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
Switching times
tstg
Storage Time
tf
Fall Time
IC= 6A ,. |
| Datasheet | 2SC3688 pdf datasheet |
| Part Number | 2SC3688 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package ·High breakdown voltage ·High speed APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output application. |
| Features |
ge Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ;IB=0A IC=8A ; IB=2.0A IC=8A ; IB=2.0A VCE=1500V; RBE=0V VEB=4V; IC=0A IC=1A ; VCE=5V 8 MIN 800
2SC3688
SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE
TYP.
MAX
UNIT V
5.0 1.5 1. |
| Datasheet | 2SC3688 pdf datasheet |
| Part Number | 2SC3688 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN Triple Diffused Planar Silicon Transistor |
| Description | Ordering number:EN1940B NPN Triple Diffused Planar Silicon Transistor 2SC3688 Ultrahigh-Definition CRT Display Horizontal Deflection Output Appl. |
| Features |
· Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI oll. |
| Datasheet | 2SC3688 pdf datasheet |
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