TRANSISTOR. 2SC3710A Datasheet

2SC3710A Datasheet PDF

Part 2SC3710A
Description Silicon NPN Epitaxial Type TRANSISTOR
Feature www.DataSheet4U.com 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A .
Manufacture Toshiba Semiconductor
Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector 2SC3710A Datasheet





2SC3710A
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
2SC3710A
High-Power Switching Applications
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.4 V (max)
High-speed switching: tstg = 1.0 μs (typ.)
Complementary to 2SA1452A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 6 V
Collector current
IC 12 A
Base current
IB 2 A
Collector power dissipation
(Tc = 25°C)
PC 30 W
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-12-21



2SC3710A
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 80 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 1 V, IC = 6 A
IC = 6 A, IB = 0.3 A
VBE (sat) IC = 6 A, IB = 0.3 A
fT VCE = 5 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
20 μs Input IB1
Output
Switching time Storage time
Fall time
tstg IB2
VCC 30 V
tf IB1 = 0.3 A,IB2 = 0.3 A,
duty cycle 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
2SC3710A
Min Typ. Max Unit
― ― 10 μA
― ― 10 μA
80 ― ―
V
70 240
40 ― ―
0.2 0.4
V
0.9 1.2
V
80 MHz
220
pF
0.2
1 ― μs
0.2
C3710A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
NOTE 2:
Note 2 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2010-12-21




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