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2SC3854 Datasheet

Part Number 2SC3854
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3854 Datasheet2SC3854 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3854 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1490 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current C.

  2SC3854   2SC3854






Part Number 2SC3854
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3854 Datasheet2SC3854 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1490 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Co.

  2SC3854   2SC3854







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3854 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1490 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 160 120 6 8 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 50 MIN 120 6 2SC3854 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.5 100 100 V µA µA 20 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3854 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .


2009-03-31 : STOD1412    STOD1812    STOTG04E    STOTG04ES    CBP1251    CBP1252    CBP1253    CBP1254    CBP1255    CBP1256   


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