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2SC3856 Datasheet

SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1492 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum.


SavantIC
2SC3856.pdf

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SavantIC 2SC3856 Datasheet

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1492 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 180 6 15 4 130 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capa.






2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 180 V VEBO 6 V IC 15 A IB 4 A PC 130(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol.


Sanken electric
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Sanken electric 2SC3856 Datasheet

2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 200 V VCEO 180 V VEBO 6 V IC 15 A IB 4 A PC 130(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO IEBO VCB=200V VEB=6V 100max µA 100max µA V(BR)CEO IC=50mA 180min V hFE VCE=4V, IC=3A 50min∗ VCE(sat) IC=5A, IB=0.5A 2.0max V fT VCE=12V, IE=–0.5A 20typ MHz COB VCB=10V, f=1MHz 300typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) External Dimensions MT-100(TO3P) 2.0 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 4.0 19.9±0.3 a ø3.2±0.1 b 2 3 1.05 +-00..12 0.65 +0.2 -0.1 20.0min 4.0max sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 40 4 10 10 –5 1 IB2 ton tstg tf (A) (µs) (µs) (µs) –1 0.5typ.






isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1492 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.


INCHANGE
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INCHANGE 2SC3856 Datasheet

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1492 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3856 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3856 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage CONDITIONS IC= 50mA ; IB= 0 VCE(sat) Collector-Emitte.








 

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