| Part Number | 2SC3978 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Power Transistors 2SC3978, 2SC3978A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10... |
| Features |
q q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 900 1000 900 1000 800 7 3 2 0.5 35 2 150 –55 to... |
| Datasheet | 2SC3978 pdf datasheet |
| Part Number | 2SC3979A |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-s. |
| Features |
10.0±0.2 5.5±0.2
Unit: mm 4.2±0.2 2.7±0.2
• High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 1.. |
| Datasheet | 2SC3979A pdf datasheet |
| Part Number | 2SC3979 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for ro. |
| Features |
ONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.8A; IB= 0.16A
1.5
V
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
50 μ. |
| Datasheet | 2SC3979 pdf datasheet |
| Part Number | 2SC3979 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation APPLICATIONS ·For high breakdown voltage high-sp. |
| Features |
emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=0.8A ;IB=0.16A IC=0.8A; IB=0.16A VCB=900V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IC=0.8A ; VCE=5V IC=0.15A ; VCE. |
| Datasheet | 2SC3979 pdf datasheet |
| Part Number | 2SC3979 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-s. |
| Features |
10.0±0.2 5.5±0.2
Unit: mm 4.2±0.2 2.7±0.2
• High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 1.. |
| Datasheet | 2SC3979 pdf datasheet |
| Part Number | 2SC3978A |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Power Transistors 2SC3978, 2SC3978A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 Unit: mm 10. |
| Features |
q q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 900 1000 900 1000 800 7 3 2 0.5 35 2 150 –55 to. |
| Datasheet | 2SC3978A pdf datasheet |
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