| DatasheetsPDF.com |
2SC4115 Transistor Datasheet PDFNPN Transistor NPN Transistor |
| Part Number | 2SC4115 |
|---|---|
| Description | NPN Transistor |
| Feature | 2SC4115
TRANSISTOR (NPN)
FEATURES z Lo w VCE(sat). VCE(sat) = 0. 2V (Typ. )(IC / IB = 2A / 0. 1A) z Excellent current gai n characteristics. z Complements to 2SA 1585 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Bas e Voltage Collector-Emitter Voltage Emi tter-Base Voltage Collector Current -Co ntinuous Collector Power Dissipation Ju nction Temperature Storage Temperature Value 40 20 6 3 500 150 -55-150 Units V V V A mW ℃ ℃ SOT-89 1. BASE 1 2. COLLECTOR 2 3 3. EMITTER ELECTR ICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) . |
| Manufacture | JinYu |
| Datasheet |
|
|
| Part Number | 2SC4115 |
|---|---|
| Description | NPN Epitaxial Planar Silicon Transistor |
| Feature | NPN Epitaxial Planar Silicon Transistor
FEATURES
Low VCE(sat). Pb Lead-fr ee VCE(sat) = 0. 2V (Typ. )(IC / IB = 2A / 0. 1A) Excellent current gain ch aracteristics. Complements to 2SA1 585. Production specification 2SC4115 ORDERING INFORMATION Type No. Markin g 2SC4115 4115G/4115R/4115S SOT-89 P ackage Code SOT-89 MAXIMUM RATING @ Ta =25℃ unless otherwise specified Symb ol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Vol tage Collector Current -Continuous Coll ector Dissipation Junction and Storage Temperature 40 20 6 3 . |
| Manufacture | GME |
| Datasheet |
 |
| Part Number | 2SC4115 |
|---|---|
| Description | Transistor |
| Feature | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOG Y CO. , LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES z Low VCE(sat ). VCE(sat) = 0. 2V (Typ. )(IC / IB = 2A / 0. 1A) www. DataSheet4U. com z Excellent current gain characteristics. z Complem ents to 2SA1585 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Colle ctor-Base Voltage Collector-Emitter Vol tage Emitter-Base Voltage Collector Cur rent -Continuous Collector Power Dissip ation Junction Temperature Storage Temp erature Value 40 20 6 3 500 150 -55-150 Units V V V A m . |
| Manufacture | Jiangsu |
| Datasheet |
 |
|
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |