Part Number | 2SC4168 |
Manufacturer | Sanyo Semicon Device |
Title | PNP/NPN Epitaxial Planar Silicon Transistors |
Description | Ordering number:EN2479A Features · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silico... |
Features |
· Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifications Absolute Maximum Ratings at Ta = 25˚C Par... |
Datasheet | 2SC4168 pdf datasheet |
Part Number | 2SC4169 |
Manufacturer | Sanyo Semicon Device |
Title | NPN Epitaxial Planar Silicon Transistor |
Description | Ordering number:ENN2476A NPN Epitaxial Planar Silicon Transistor 2SC4169 Driver Applications Applications · Suitable for use in switching of L l. |
Features |
· On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base voltage. · High DC current gain : hFE=1000 min (VCE=5V, IC=500mA). · Wide ASO. · High inductive load handling capability : Es/b=15mJ (min). 6.0 3.0 14.0 8.5 [2SC4169] 6.0 5.0 4.7 0.5 0.6 0.5 0.5 Specific. |
Datasheet | 2SC4169 pdf datasheet |
Part Number | 2SC4167 |
Manufacturer | Mitsubishi Electric Semiconductor |
Title | NPN Transistor |
Description | . |
Features |
. |
Datasheet | 2SC4167 pdf datasheet |
Part Number | 2SC4164 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot. |
Features |
AL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
500
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
400
V
VCEX(SUS) Collector-Emitter Sustaining Voltage
IC= 6A; IB. |
Datasheet | 2SC4164 pdf datasheet |
Part Number | 2SC4164 |
Manufacturer | SavantIC |
Title | SILICON POWER TRANSISTOR |
Description | ·With TO-220C package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN 1 2 3 . |
Features |
breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;RBE== IC=1mA ;IE=0 IE=1mA; IC=0 IC=8A; IB=1.. |
Datasheet | 2SC4164 pdf datasheet |
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