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2SC4212 Datasheet

Part Number 2SC4212
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN triple diffusion planar type Transistor
Datasheet 2SC4212 Datasheet2SC4212 Datasheet (PDF)

Power Transistors 2SC4212 Silicon NPN triple diffusion planar type Unit: mm For color TV horizontal deflection driver φ 3.16±0.1 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 3.8±0.3 11.0±0.5 I Features I Absolute Maximum Ratings TC = 25°C www.DataSheet4U.com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collect.

  2SC4212   2SC4212






Part Number 2SC4219
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC4212 Datasheet2SC4219 Datasheet (PDF)

Ordering number:EN2709 NPN Triple Diffused Planar Silicon Transistor 2SC4219 400V/4A Switching Regulator Applications Features · High breakdown voltage, high reliability (VCEO≥400V). · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Suitable for sets whose height is restricted. Package Dimensions unit:mm 2049C [2SC4219] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.2 9.4 0.8 0.4 Specifications 123 2.55 2.55 2.7 1 : Base 2 : Collector 3 : Emitter SANYO : T.

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Part Number 2SC4218
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC4212 Datasheet2SC4218 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  2SC4212   2SC4212







Part Number 2SC4217
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC4212 Datasheet2SC4217 Datasheet (PDF)

Ordering number:EN2968 NPN Triple Diffused Planar Silicon Transistor 2SC4217 Color TV Chroma Output and Audio Output Applications Features · High breakdown voltage (VCEO≥300V). · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2042A [2SC4217] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature .

  2SC4212   2SC4212







Part Number 2SC4215W
Manufacturers Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor
Description NPN Silicon Transistor
Datasheet 2SC4212 Datasheet2SC4215W Datasheet (PDF)

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z Power dissipation.(PC=100mW) Production specification 2SC4215W Pb Lead-free APPLICATIONS www.DataSheet4U.com z Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. 2SC4215W Marking QR/QO/QY SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value 40 Units V Collector-Emitter Voltage Emitter-Base Vol.

  2SC4212   2SC4212







Part Number 2SC4215-Y
Manufacturers MCC
Logo MCC
Description NPN Silicon Transistors
Datasheet 2SC4212 Datasheet2SC4215-Y Datasheet (PDF)

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC4215-R 2SC4215-O 2SC4215-Y Features • • • Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low V oise figure: NF=2dB (typ.) (f=100 MHz) Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Rating Collector-Emitter Voltage C.

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Silicon NPN triple diffusion planar type Transistor

Power Transistors 2SC4212 Silicon NPN triple diffusion planar type Unit: mm For color TV horizontal deflection driver φ 3.16±0.1 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 3.8±0.3 11.0±0.5 I Features I Absolute Maximum Ratings TC = 25°C www.DataSheet4U.com Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 350 300 7.5 400 200 1.2 *1 5 Junction temperature Storage temperature *2 Unit V V V mA mA W °C °C 1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.0 1 : Emitter 2 : Collector 3 : Base TO-126B Package 150 −55 to +150 Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink I Electrical Characteristics TC = 25°C Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 200 V, IE = 0 VEB = 5 V, IC = 0 IC = 100 µA, IE = 0 IC = 5 mA, IB = 0 IE = 100 µA, IC = 0 VCE = 10 V, IC = 10 mA IC = 50 mA, IB = 5 mA VCB = 30 V, IE = −10 mA, f = 200 MHz VCB = 50 V, IE = 0, f = 1 MHz 50 4.5 350 300 7.5 40 250 1 V MHz pF Min .


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