BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.(PC=100mW)
Production specifi...
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.(PC=100mW)
Production specification
2SC4215W
Pb
Lead-free
APPLICATIONS
www.DataSheet4U.com z Audio
frequency general purpose amplifier.
ORDERING INFORMATION
Type No. 2SC4215W Marking QR/QO/QY
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base
Voltage Value 40 Units V
Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current -Continuous
30 4 20
V V mA
Collector Dissipation Junction and Storage Temperature
150 -55~150
mW ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF041 Rev.A
www.galaxycn.com 1
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage
www.DataSheet4U.com
Production specification
2SC4215W
MIN 40 30 4 0.1 0.5 40 200 25 260 550 ps MHz TYP MAX UNIT V V V μA μA
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE CC.rbb’ fT
Test conditions IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=4V,IE=0 VEB=4V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=1mA VCE=6V, IE= 1mA
Collector cut-off current Emitter cut-off current DC current gain Collector-base time constant Transition frequency
CLASSIFICANTION OF hFE
Marking hFE QR 90-180 QO 135-270 QY 200-400
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSS...