isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4242
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: V...
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4242
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 0.8V(Max.)@ IC= 4.0A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use in high-
voltage, high-speed , power
switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
450
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
14
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 3.125 ℃/W
isc Website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
INCHANGE Semiconductor
2SC4242
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 0.1A; IB= 0
400
V
V(BR)CBO Collector-Base Breakdown
Voltage IC= 1mA; IE= 0
450
V
V(BR)EBO Emitter-B...