| Part Number | 2SC4264 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Noise ·High Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·De... |
| Features |
μA
ICEO
Collector Cutoff Current
VCE= 11V; RBE= ∞
10 μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
1.0 μA
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA
0.7
V
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
20
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
1.4
GHz... |
| Datasheet | 2SC4264 pdf datasheet |
| Part Number | 2SC4264 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon NPN Transistor |
| Description | 2SC4264 Silicon NPN Epitaxial Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector. |
| Features |
VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 10 V, IC = 10 mA
See characteristic curves of 2SC2734.
2
2SC4264
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 120 100 80 60 40 20
0
50 100 150 Ambient Temperature Ta (°C)
3
Unit: mm
0.425
2.0 ± 0.2
0.1 0.3 +. |
| Datasheet | 2SC4264 pdf datasheet |
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