2SC4332

DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and features a very low www.DataSheet4U.com collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKAGE DRAWING (Unit: mm) FEATURES Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A) Fast switching speed: tf ≤ 0.3 µs MAX. (IC = 3 A) High DC current gain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse) Note1 100 60 7.0 5.0 10 2.5 15 1.0 Note2 V V V A A A W Note3 IB(DC) PT (TC = 25°C) PT (TA = 25°C) Tj Tstg , 2.0 W °C °C 150 −55 to +150 Notes 1. PW ≤ 10 ms, duty cycle ≤ 50% 2. Printing borard mounted 3. 7.5 mm x 0.7 mm, ceramic board mounted Electrode Connection 1. Base 2. Collector 3. Emitter 4. Fin (collector) 2 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every coun...