2SC4492

Ordering number:EN3098 NPN Triple Diffused Planar Silicon Transistor 2SC4492 High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage. · Small Cob. · High reliability (Adoption of HVP process). · Intended for high-density mounting (Suitable for sets whose height is restricted). Package Dimensions unit:mm 2049C [2SC4492] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.2 9.4 0.8 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=600V, IE=0 VEB=5V, IC=0 VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=10V, IC=2mA IC=10mA, IB=2mA IC=10mA, IB=2mA 123 2.55 2.55 2.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220MF Ratings 600 600 7 20 60 1.65 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 20 10 40 max 1 1 50 1 1.5 Unit µA µA MHz V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life...