DatasheetsPDF.com

2SC4500L Datasheet

Part Number 2SC4500L
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4500L Datasheet2SC4500L Datasheet (PDF)

2SC4500(L)/(S) Silicon NPN Epitaxial Application Low frequency amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 S Type 3 3 L Type 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj.

  2SC4500L   2SC4500L






Part Number 2SC4500L
Manufacturers Renesas
Logo Renesas
Description Silicon NPN Transistor
Datasheet 2SC4500L Datasheet2SC4500L Datasheet (PDF)

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other H.

  2SC4500L   2SC4500L







NPN TRANSISTOR

2SC4500(L)/(S) Silicon NPN Epitaxial Application Low frequency amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 S Type 3 3 L Type 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings 60 60 7 1 2 0.8 8 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 7 — 2000 — — — — Typ — — — — — — 100 600 Max — — 10 — 1.5 2.0 — — V V ns ns Unit V V µA Test Conditions I C = 1 mA, RBE = ∞ I E = 0.1 mA, IC = 0 VCB = 60 V, IE = 0 VCE = 10 V, IC = 500 mA*1 I C = 500 mA, IB = 0.5 mA*1 I C = 500 mA, IB = 0.5 mA*1 VCC = 12 V, IC = 250 mA, I B1 = –IB2 = 5 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse Test. V(BR)EBO I CBO hFE VCE (sat) VBE (sat) t on t off 2 2SC4500(L)/(S) Maximum Collector Dissipation Curve 12 Collector power dissipation PC (W) 3.0 100 Area of Safe Operation Collector current IC (A) 1.0 µs PW ) 5°C s =2 TC 1m s on( 0 m rati = 1 C Ope D 8 0.3 4 0.1 Ta = 25°C, 1 Shot Pulse 0.03 1.0 0 50 100 .


2005-04-03 : STK4110    STK4111    STK4112    4511    4511B    FQ08E    2SC4491    2SC4492    2SC4493    2SC4495   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)