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2SC4692

Hitachi

Silicon NPN Triple Diffused Planar Transistor

2SC4692 Silicon NPN Triple Diffused Application EDTV/HDTV horizontal deflection output Features • High speed switching...


Hitachi

2SC4692

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2SC4692 Silicon NPN Triple Diffused Application EDTV/HDTV horizontal deflection output Features High speed switching 0.5 µs Max High breakdown voltage VCBO = 1500 V Isolated package; TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4692 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (surge) PC* Tj Tstg 1 Ratings 1500 800 5 12 20 50 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 800 5 — 15 — — — Typ — — — — — — — Max — — 500 35 5 1.5 0.5 V V µs Unit V V µA Test conditions IC = 10 mA, RBE = _ IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 10 A, IB = 2 A IC = 10 A, IB = 2 A ICP = 8 A, IB1 = 1.4 A, IB2 = –2.5 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES hFE VCE (sat) VBE (sat) tf 2 2SC4692 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 40 20 0 50 100 Case Temperature TC (°C) Area of Safe Operation 150 20 (100 V, 20 A) f = 31.5 kHz Ta = 25°C Collector Current IC (A) 16 For picture tube arcing 12 8 (800 V, 5 A) 4 0.5 mA 0 ...




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