DatasheetsPDF.com

2SC4747 Datasheet

Part Number 2SC4747
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC4747 Datasheet2SC4747 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4747 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO E.

  2SC4747   2SC4747






Part Number 2SC4747
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC4747 Datasheet2SC4747 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4747 DESCRIPTION ·With TO-3PFM package ·High speed switching ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Em.

  2SC4747   2SC4747







Part Number 2SC4747
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description NPN TRANSISTOR
Datasheet 2SC4747 Datasheet2SC4747 Datasheet (PDF)

2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.3 µs Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4747 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC .

  2SC4747   2SC4747







NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4747 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current- Continuous 10 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4747 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 hFE DC Current Gain IC= 1A ; VCE= 5V tf Fall Time ICP= 7A , IB1= 1.4A MIN TYP. MAX UNIT 800 V 6 V 5.0 V 1.5 V 500 μA 30 0.3 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at .


2020-09-29 : 2SD203    2SD201    2SD200    2SD108    2SD130    2SD74    2SD60    2SD73    2SC6082    2SC5993   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)