2SC4770

Ordering number:EN3666A NPN Triple Diffused Planar Silicon Transistor 2SC4770 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4770] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 0.6 3.5 20.4 Specifications 123 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Ratings 1500 800 6 7 16 3 60 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage ICBO ICES VCEO(sus) IEBO VCE(sat) VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 IC=5A, IB=1.7A Base-to-Emitter Saturation Voltage VBE(sat) IC=5A, IB=1.7A * : The 2SC4770 is classified by 5A hFE as follows : hFE 3 to 5 Rank 1 4 to 6 2 5 to 8 3 Ratings min typ 800 max 10 1.0 1.0 5 1.5 Unit µA mA V mA V V Any and all SANYO products described or contained herein do not have specifications th...