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2SC4905 Datasheet

Part Number 2SC4905
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Bipolar Transistor
Datasheet 2SC4905 Datasheet2SC4905 Datasheet (PDF)

2SC4905 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz CMPAK 3 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 20 V ——————————————————————————————————————————— Collector to emitter voltage V.

  2SC4905   2SC4905






Part Number 2SC4909
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN TRANSISTOR
Datasheet 2SC4905 Datasheet2SC4909 Datasheet (PDF)

Ordering number:EN4410 NPN Epitaxial Planar Silicon Transistor 2SC4909 Muting Circuits, Drivers Features · High DC current gain. · On-chip bias resistance (R1=47kΩ, R2=47kΩ). · Very small-sized package permitting 2SC4909- applied sets to be made smaller and slimmer. · Small ON resistance. 0.425 Package Dimensions unit:mm 2059B [2SC4909] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Co.

  2SC4905   2SC4905







Part Number 2SC4908
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC4905 Datasheet2SC4908 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base v.

  2SC4905   2SC4905







Part Number 2SC4908
Manufacturers Sanken electric
Logo Sanken electric
Description NPN TRANSISTOR
Datasheet 2SC4905 Datasheet2SC4908 Datasheet (PDF)

2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4908 900 800 7 3(Pulse6) 1.5 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4908 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 40typ V V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V V.

  2SC4905   2SC4905







Part Number 2SC4907
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC4905 Datasheet2SC4907 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4907 DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO= 500V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 500 V VEBO E.

  2SC4905   2SC4905







Part Number 2SC4907
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC4905 Datasheet2SC4907 Datasheet (PDF)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4907 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base v.

  2SC4905   2SC4905







Silicon NPN Bipolar Transistor

2SC4905 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz CMPAK 3 1 2 1. Emitter 2. Base 3. Collector Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 20 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 12 V ——————————————————————————————————————————— Emitter to base voltage VEBO 2 V ——————————————————————————————————————————— Collector current IC 50 mA ——————————————————————————————————————————— Collector power dissipation PC 100 mW ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— 2SC4905 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 20 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector cutoff current ICBO — — 10 µA VCB = 15 V, IE = 0 —————————————————————————————— ICEO ——1 mA VCE = 12 V, RBE = ∞ ——————————————————————————————————————————— Emitter cutoff current IEBO — — 10 µA VEB = 2 V, IC = 0 ————————————————————————————.


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