2SC5024

2SC5024 Silicon NPN Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 300 MHz typ High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier Complimentary pair of 2SA1889 TO–126FM 123 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to base voltage VCBO 200 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 200 V ——————————————————————————————————————————— Emitter to base voltage VEBO 4 V ——————————————————————————————————————————— Collector current IC 0.2 A ——————————————————————————————————————————— Collector peak current ic(peak) 0.5 A ——————————————————————————————————————————— Collector power dissipation PC 1.4 W ——————————————————————————————————————————— Collector power dissipation PC*1 8W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Note: 1. Value at TC = 25°C. 2SC5024 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Collector to base V(BR)CBO 200 — — V IC = 10 µA, breakdown voltage IE = 0 ———————————————————————————————————————————...