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2SC5128 Transistor Datasheet PDFSilicon NPN Transistor Silicon NPN Transistor |
| Part Number | 2SC5128 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | www. DataSheet4U. com Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4. 6±0. 2 s Features q q q q φ3. 2±0. 1 9. 9±0. 3 2. 9±0. 2 4. 1±0. 2 8. 0±0. 2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 800 500 8 10 5 3 40 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 15. 0±0. 3 3. 0±0. 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collec. |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| Part Number | 2SC5128 |
|---|---|
| Description | Silicon NPN Transistor |
| Feature | www. DataSheet4U. com Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4. 6±0. 2 s Features q q q q φ3. 2±0. 1 9. 9±0. 3 2. 9±0. 2 4. 1±0. 2 8. 0±0. 2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 800 500 8 10 5 3 40 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 15. 0±0. 3 3. 0±0. 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collec. |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| Part Number | 2SC5128 |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5128
DESCRIPTION ·Collector–Emitter Breakdown Voltage
: V(BR)CEO= 500V(Min) ·High Speed Switching ·Full-pack package with outstanding insulation,
which can be in staled to the heat sink with one screw ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO . |
| Manufacture | INCHANGE |
| Datasheet |
| Part Number | 2SC5128 |
|---|---|
| Description | NPN Transistor |
| Feature | isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5128
DESCRIPTION ·Collector–Emitter Breakdown Voltage
: V(BR)CEO= 500V(Min) ·High Speed Switching ·Full-pack package with outstanding insulation,
which can be in staled to the heat sink with one screw ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO . |
| Manufacture | INCHANGE |
| Datasheet |
|
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