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2SC5128 Datasheet

Part Number 2SC5128
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC5128 Datasheet2SC5128 Datasheet (PDF)

www.DataSheet4U.com Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 800 500 8 10 5 3 40 2 150 –55 to +150 Unit V V V V A A.

  2SC5128   2SC5128






Part Number 2SC5128
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC5128 Datasheet2SC5128 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5128 DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO= 500V(Min) ·High Speed Switching ·Full-pack package with outstanding insulation, which can be in staled to the heat sink with one screw ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

  2SC5128   2SC5128







Silicon NPN Transistor

www.DataSheet4U.com Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 800 500 8 10 5 3 40 2 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 13.7–0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 2A IC = 2A, IB = 0.4A IC = 2A, IB = 0.4A VCE = 10V, IC = 0.5A, .


2007-03-09 : A3969    BD7904FS    FDB8442    IRF1503PBF    IRF6626    IRM-8751    IRM-8753    IRM-8755    MC141803    MMG1001T1   


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