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2SC5132A

Hitachi Semiconductor

Silicon NPN Triple Diffused Planar Transistor

www.DataSheet4U.com 2SC5132A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection ou...


Hitachi Semiconductor

2SC5132A

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www.DataSheet4U.com 2SC5132A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output TO–3PFM (N) Features High breakdown voltage VCES = 1500 V, IC = 8 A Built–in damper diode type Isolated package TO-3PFM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item ——————————————————————————————————————————— Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1. Value at Tc = 25°C VCES VEBO IC ic(surge) PC*1 Tj Tstg ID 1500 6 8 16 50 150 –55 to +150 6 V V A A W °C °C A www.DataSheet4U.com Symbol Ratings Unit ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com 2SC5132A Electrical Characteristics (Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Forward voltage of damper diode Fall time Symbol V(BR)EBO ICES hFE VCE(sat) VBE(sat) VECF tf Min 6 Typ — Max — Unit V Test conditions IE = 40...




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