2SC5136

2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features High gain bandwidth product fT = 3.8 GHz typ High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5136 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “TI–”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 80 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min 25 — — — 50 — 3.0 7 — Typ — — — — 100 0.85 3.8 11 2.5 Max — 100 10 300 180 1.3 — — 4.0 pF GHz dB dB Unit V nA µA nA Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 13 V, RBE = ∞ VEB = 3 V, IC = 0 VCE = 4 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 4 V, IC = 20 mA VCE = 4 V, IC = 20 mA, f = 900 MHz VCE = 4 V, IC = 5 mA, f = 900 MHz 2 2SC5136 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 160 ...