| Part Number | 2SC5294 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN triple diffusion mesa type Power Transistor |
| Description | Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High ... |
| Features |
φ3.2±0.1 5°
26.5±0.5
3.0±0.3 5°
23.4 22.0±0.5
2.0 1.2
5°
18.6±0.5
5° 5°
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to base voltage 2SC5294 2SC5294A 2SC5294 2SC5294A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
5.45±0.... |
| Datasheet | 2SC5294 pdf datasheet |
| Part Number | 2SC5299 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performan. |
| Features |
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC current gain
IC= 1. |
| Datasheet | 2SC5299 pdf datasheet |
| Part Number | 2SC5299 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection. |
| Features |
Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=8A;IB=2 A IC=8A;IB=2 A IC=100mA;IB=0 VEB=4V ;IC=0 VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=8A ; VCE=5V 20 4 800 1.0 10 1 30 7 MIN T. |
| Datasheet | 2SC5299 pdf datasheet |
| Part Number | 2SC5299 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN TRANSISTOR |
| Description | Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applic. |
| Features |
· High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5299] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter C. |
| Datasheet | 2SC5299 pdf datasheet |
| Part Number | 2SC5298 |
| Manufacturer | Sanyo Semicon Device |
| Title | NPN TRANSISTOR |
| Description | Ordering number : EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output App. |
| Features |
• High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Vo. |
| Datasheet | 2SC5298 pdf datasheet |
| Part Number | 2SC5297 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performan. |
| Features |
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC current gai. |
| Datasheet | 2SC5297 pdf datasheet |
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