2SC5294A

Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SC5294 base voltage 2SC5294A Collector to 2SC5294 base voltage 2SC5294A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg Ratings 1500 1600 1500 1600 600 5 30 20 10 120 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 3.3±0.3 0.7±0.1 4.5 15.5±0.5 φ3.2±0.1 3.0±0.3 5° 5° 23.4 22.0±0.5 2.0 1.2 10.0 26.5±0.5 4.0 2.0±0.2 1.1±0.1 5.45±0.3 5° 5° 5° 5° 2.0 18.6±0.5 5.45±0.3 0.7±0.1 5.5±0.3 2.0 123 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions 2SC5294 Collector cutoff current 2SC5294A 2SC5294 ICBO 2SC5294A Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time IEBO hFE VCE(sat) VBE(sat) fT tstg tf VCB = 1000V, IE = 0 VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8...