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2SC5296 Transistors Datasheet PDFSilicon NPN Power Transistors Silicon NPN Power Transistors |
| Part Number | 2SC5296 |
|---|---|
| Description | Silicon NPN Power Transistors |
| Feature | isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition CRT display horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse Collec. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part Number | 2SC5296 |
|---|---|
| Description | Silicon NPN Power Transistors |
| Feature | isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition CRT display horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse Collec. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part Number | 2SC5296 |
|---|---|
| Description | NPN TRANSISTOR |
| Feature | w
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. D a t a S h e e t . c o . k r Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3. 4 16. 0 5. 0 8. 0 5. 6 3. 1 21. 0 22. 0 4. 0 2. 8 2. 0 20. 4 1. 0 2. 0 0. 6 1 2 3 3. 5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol. |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part Number | 2SC5296 |
|---|---|
| Description | NPN TRANSISTOR |
| Feature | w
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. D a t a S h e e t . c o . k r Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3. 4 16. 0 5. 0 8. 0 5. 6 3. 1 21. 0 22. 0 4. 0 2. 8 2. 0 20. 4 1. 0 2. 0 0. 6 1 2 3 3. 5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol. |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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